Oak-Mitsui Technologies presented at IMS 2023 to present an embedded capacitance material called FaradFlex to improve SI/PI and mitigate EMI, ultra thin copper called MicroThin and low-profile copper. Thanks for those who stopped by Oak-Mitsui booth!!! 🙂
Oak-Mitsui Technologies presented at PCB West 2022 to present an embedded capacitance material called FaradFlex to improve SI/PI and mitigate EMI, ultra thin copper called MicroThin and low-profile copper. Thanks for stopping by our booth!!! 🙂
Taiki Kitazawa from NAIST (Nara Institute of Science and Technology) presented a paper titled “Analysis of the PDN Induced Crosstalk Impacts on the High-Speed Signaling in Ultra-Thin and High Permittivity Substrates” at EMC Europe 2022 in Gothenburg last week.Great job and thanks Kitazawa-san for evaluating embedded capacitance material called FaradFlex from Oak-Mitsui Technologies and hope to […]
Oak-Mitsui Technologies will be exhibiting at IPC APEX 2022 at San Diego Convention Center to showcase embedded capacitance material FaradFlex, MicroThin and VSP copper. Please join us!!! 🙂
Oak-Mitsui Technologies will be exhibiting at PCB West 2021 on 10/6 at Santa Clara Convention Center to showcase FaradFlex, MicroThin and VSP copper. Please join us!!! 🙂
Oak-Mitsui Technologies exhibited DesignCon 2021 at San Jose Convention Center to present FaradFlex and MicroThin. FaradFlex is an embedded capacitance material to improve SI/PI and mitigate EMI.
Oak-Mitsui Technologies will be exhibiting at DesignCon 2021 in Silicon Valley from 8/17 to 8/18 to present MicroThin and FaradFlex. Please join us!!! 🙂
Oak-Mitsui Technologies will be exhibiting at IMS 2021 in Atlanta from 6/8 to 6/9 to present MicroThin and FaradFlex. Please join us!!! 🙂
Yoshi will be presenting a joint-paper titled “Reducing the radiation from PCB cavities with a high-DK dielectric layer” at EMC Europe 2020 Virtual to discuss about EMI from PCB cavity with high Dk and ultra-thin embedded capacitance material for higher frequency application such as 5G or mmWave radar.